Modelling of microcavity effect in InGaN/GaN heterostructures for interfacial study
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DOI: 10.1088/2053-1591/aad11e
Abstract: Photoluminescence (PL) spectrumprovides themost conventionalmeasurement for emission properties of GaN-based light-emitting diodes (LEDs), in which Fabry–Perot oscillations are often observedmodulating the emission peaks. Afittingmodel for PL intensity accounting themicrocavity between air/GaNandGaN/sapphire heterostructure was proposed to… read more here.
Keywords: ingan gan; microcavity effect; heterostructures interfacial; modelling microcavity ... See more keywords