Parameter extraction and modelling of the MOS transistor by an equivalent resistance
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DOI: 10.1080/13873954.2020.1857790
Abstract: During the analysis of multi-transistor circuits, the need arises to evaluate the time delay or the power consumption of the circuit. Due to the complexity of the transistor model, several complica... read more here.
Keywords: extraction modelling; mos transistor; parameter extraction; modelling mos ... See more keywords