Sign Up to like & get
recommendations!
0
Published in 2021 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2021.3081527
Abstract: We investigate the operation modes of a dual-gate reconfigurable field-effect transistor (RFET). To this end, dual-gate silicon-nanowire FETs are fabricated based on anisotropic wet etching of silicon and nickel silicidation yielding silicide-nanowire Schottky junctions at…
read more here.
Keywords:
operation modes;
gate reconfigurable;
gate;
modes dual ... See more keywords