Resistive switching characteristics of a modified active electrode and Ti buffer layer in Cu Se-based atomic switch
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DOI: 10.1016/j.jallcom.2018.04.179
Abstract: Abstract Atomic switches are well-known promising candidates for future application in non-volatile logic memory devices. The resistive switching characteristics of these devices depend on the formation of a conductive filament (CF) by active metal electrodes.… read more here.
Keywords: buffer layer; modified active; resistive switching; active electrode ... See more keywords