Characterization of inhomogeneous Ni/GaN Schottky diode with a modified log-normal distribution of barrier heights
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DOI: 10.1088/1361-6641/ab3071
Abstract: The current versus voltage (I-V) characteristics of a Ni/GaN Schottky diode are measured from 50 to 400 K and the temperature dependence of the extracted barrier heights and ideality factors is described as a consequence… read more here.
Keywords: barrier heights; modified log; barrier; gan schottky ... See more keywords