Intensity and Phase Modulators at 1.55 μm in GaAs/AlGaAs Layers Directly Grown on Silicon
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DOI: 10.1109/jlt.2018.2863208
Abstract: We report for the first-time electro-optic phase and amplitude modulators in GaAs/AlGaAs epitaxial layers grown on misaligned silicon substrates containing germanium buffer layers. Epilayer has a npin doping profile and is equivalent to a pin… read more here.
Keywords: phase; intensity phase; modulators gaas; phase modulators ... See more keywords