Design and analysis of electro-absorption modulators with uniaxially stressed Ge/SiGe multiple quantum wells.
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DOI: 10.1364/oe.25.010874
Abstract: We propose and analyze theoretically electro-absorption modulators with uniaxially tensile strained Ge/Si0.19Ge0.81 multiple quantum wells (MQWs). The effects of uniaxial strain on band structures including Γ-valley and L-valley are discussed. The simulation results indicate that… read more here.
Keywords: absorption; modulators uniaxially; multiple quantum; absorption modulators ... See more keywords