Molecular Interlayer for High‐Performance and Stable 2D Tin Halide Perovskite Transistor
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DOI: 10.1002/advs.202409088
Abstract: Tin (Sn) halide perovskites present considerable potential for the advancement of high‐performance p‐channel field‐effect transistors (FETs), attributable to their low hole effective mass and reduced carrier scattering. However, their intrinsic instability has impeded their ability… read more here.
Keywords: performance; tin halide; high performance; molecular interlayer ... See more keywords