Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.125359
Abstract: Abstract Epitaxial defects such as threading screw dislocation (TSD), basal plane dislocation (BPD) and so on will seriously reduce the reverse voltage or increase leakage current of power devices. We studied the classification and statistics… read more here.
Keywords: molten koh; defect appearance; epitaxial defects; appearance sic ... See more keywords
Cavity etching evolution on the A-plane of sapphire crystal in molten KOH etchant
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2020.125926
Abstract: Abstract Chemical wet etching technology is widely applied in semiconductor device fabrication such as the patterned sapphire substrates. However, the etching of pre-formed structure is still lack of investigations, which has potential applications in the… read more here.
Keywords: sapphire crystal; molten koh; sapphire; cavity ... See more keywords