Electron capture by vacancy-type defects in carbon-doped GaN studied using monoenergetic positron beams
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DOI: 10.1016/j.tsf.2017.08.021
Abstract: Abstract Vacancy-type defects in GaN with different carbon concentrations ([C] = 2 × 1016 − 1 × 1018 cm− 3) were probed using monoenergetic positron beams. 1.5-μm-thick GaN layers were grown on Si substrates by metalorganic vapor phase epitaxy. Measurements of Doppler broadening spectra and… read more here.
Keywords: positron; monoenergetic positron; type defects; using monoenergetic ... See more keywords
Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5026831
Abstract: Defects in the Al2O3(25 nm)/GaN structure were probed by using monoenergetic positron beams. Al2O3 films were deposited on GaN by atomic layer deposition at 300 °C. Temperature treatment above 800 °C leads to the introduction of vacancy-type defects… read more here.
Keywords: structure probed; monoenergetic positron; positron beams; gan structure ... See more keywords