Sub-5 nm monolayer KMgX (X = P, As, Sb)-based homogeneous CMOS devices for high-performance applications.
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DOI: 10.1039/d5nr00264h
Abstract: For CMOS electronics, the channel materials - which can offer symmetrical performance for n- and p-type devices, along with the ability to scale transistors down to the ultra-scale limit - are crucial in the next… read more here.
Keywords: high performance; monolayer kmgx; performance; sub monolayer ... See more keywords