Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors
Sign Up to like & getrecommendations! Published in 2017 at "Advanced Functional Materials"
DOI: 10.1002/adfm.201606469
Abstract: Monolayer WxMo1−xS2-based field effect transistors are demonstrated for the first time on the monolayer WxMo1−xS2 flake, which is grown by the chemical vapor deposition method under an atmospheric pressure. Detailed material studies using Raman and… read more here.
Keywords: wxmo1 xs2; xs2; monolayer wxmo1; field effect ... See more keywords