3-D multilayer monolithic integration of vertical-oriented double-heterojunction GaAs based pHEMT and thermal influence on device parameters
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.03.001
Abstract: Abstract This study focuses on 3-D multilayer monolithic integration of vertical-oriented double-heterojunction AlGaAs/InGaAs/GaAs based pseudomorphic high electron mobility transistors. The effects of the presence of 3-D components above the active layer were accomplished by comparing… read more here.
Keywords: state; multilayer monolithic; monolithic integration; vertical oriented ... See more keywords
Semi-monolithic Integration of All-Chalcopyrite Multijunction Solar Conversion Devices via Thin-Film Bonding and Exfoliation.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c10578
Abstract: We report on a semi-monolithic integration method to circumvent processing incompatibility between materials of dissimilar classes and combine them into multijunction devices for photovoltaic and photoelectrochemical applications. Proof-of-concept all-chalcopyrite tandems were obtained by consecutive transfer… read more here.
Keywords: monolithic integration; multijunction; chalcopyrite; semi monolithic ... See more keywords
Heterogeneous and Monolithic 3D Integration of III-V-Based Radio Frequency Devices on Si CMOS Circuits.
Sign Up to like & getrecommendations! Published in 2022 at "ACS nano"
DOI: 10.1021/acsnano.2c00334
Abstract: Next-generation wireless communication such as sixth-generation (6G) and beyond is expected to require high-frequency, multifunctionality, and power-efficiency systems. A III-V compound semiconductor is a promising technology for high-frequency applications, and a Si complementary metal-oxide-semiconductor (CMOS)… read more here.
Keywords: heterogeneous monolithic; monolithic integration; frequency; integration ... See more keywords
Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth.
Sign Up to like & getrecommendations! Published in 2020 at "Nanoscale"
DOI: 10.1039/d0nr05779g
Abstract: We report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our method includes elements of both selective… read more here.
Keywords: selective area; growth; inp; monolithic integration ... See more keywords
Monolithic integration of individually addressable light-emitting diode color pixels
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4978554
Abstract: Monolithic integration of individually addressable light-emitting diode (LED) color pixels is reported. The integration is enabled by local strain engineering. The use of a nanostructured active region comprising one or more nanopillars allows color tuning… read more here.
Keywords: addressable light; color; integration; individually addressable ... See more keywords
ScAlN/3C-SiC/Si platform for monolithic integration of highly sensitive piezoelectric and piezoresistive devices
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0004943
Abstract: This paper reports on a platform for monolithic integration of piezoelectric and piezoresistive devices on a single chip using the ScAlN/3C-SiC/Si heterostructure. Surface acoustic wave devices with an electromechanical coupling of 3.2% and an out-of-band… read more here.
Keywords: scaln sic; piezoresistive devices; piezoelectric piezoresistive; monolithic integration ... See more keywords
Development of a Wideband 220-GHz Subharmonic Mixer Based on GaAs Monolithic Integration Technology
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Access"
DOI: 10.1109/access.2020.2973399
Abstract: A wideband 220 GHz subharmonic mixer based on monolithic integration technology is proposed in this paper. It features $12~\mu \text{m}$ -thick GaAs membrane with anti-parallel Schottky diodes working at THz band monolithically integrated on the… read more here.
Keywords: integration technology; monolithic integration; ghz; 220 ghz ... See more keywords
Hyperdimensional Computing Exploiting Carbon Nanotube FETs, Resistive RAM, and Their Monolithic 3D Integration
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Journal of Solid-State Circuits"
DOI: 10.1109/jssc.2018.2870560
Abstract: The field of machine learning is witnessing rapid advances along several fronts: new machine learning models, new machine learning algorithms utilizing these models, new hardware architectures for these algorithms, and new technologies for creating energy-efficient… read more here.
Keywords: hyperdimensional computing; integration; energy; carbon nanotube ... See more keywords
Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2016.2637382
Abstract: Integration of InxGa1–xAs n-MOSFETs and SiyGe1–y p-MOSFETs could be a key to realize future low-power and high-speed logic circuits. In this paper, monolithic integration of InAs n-MOSFETs and Ge p-MOSFETs on a Si substrate is… read more here.
Keywords: sub italic; integration; sub; monolithic integration ... See more keywords
Monolithic integration of InGaAs n-FETs and lasers on Ge substrate.
Sign Up to like & getrecommendations! Published in 2017 at "Optics express"
DOI: 10.1364/oe.25.005146
Abstract: We report the first monolithic integration of InGaAs channel field-effect transistors with InGaAs/GaAs multiple quantum wells (MQWs) lasers on a common platform, achieving a milestone in the path of enabling low power and high speed… read more here.
Keywords: lasers substrate; integration ingaas; fets lasers; ingaas fets ... See more keywords
Monolithic integration of electro-absorption modulators and photodetectors on III-V CMOS photonics platform by quantum well intermixing.
Sign Up to like & getrecommendations! Published in 2022 at "Optics express"
DOI: 10.1364/oe.462626
Abstract: Quantum well intermixing (QWI) on a III-V-on-insulator (III-V-OI) substrate is presented for active-passive integration. Shallow implantation at a high temperature, which is essential for QWI on a III-V-OI substrate, is accomplished by phosphorus molecule ion… read more here.
Keywords: photonics; monolithic integration; integration; integration electro ... See more keywords