Electrical characterization of Ag/MoO3−x/p-Si Schottky diodes based on MoO3−x synthesized via sol–gel method: an investigation on frequency and voltage dependence
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DOI: 10.1007/s10854-024-12559-8
Abstract: MoO3−x is a commonly used buffer layer in organic based optoelectronic devices to align energy level between active semiconductor and metal layer. The purpose of this study is to show the effects of the MoO3−x… read more here.
Keywords: moo3 interlayer; gel method; moo3 schottky; sol gel ... See more keywords