Optoelectronic Properties of α-MoO3 Tuned by H Dopant in Different Concentration
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DOI: 10.3390/ma15093378
Abstract: The optoelectronic properties of layered α-MoO3 are greatly limited due to its wide band gap and low carrier concentration. The insertion of hydrogen (H) can effectively tune the band structure and carrier concentration of MoO3.… read more here.
Keywords: optoelectronic properties; doped moo3; concentration; properties moo3 ... See more keywords