Resistance Switching and Failure Behavior of the MoOx/Mo2C Heterostructure.
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DOI: 10.1021/acsami.1c06663
Abstract: With the rapid demand for high-performance and power-efficient memristive and synaptic systems, more 2D heterostructures with improved resistance switching (RS) properties are still urgently in need for next-generation devices. Here, we report the RS behaviors… read more here.
Keywords: moox mo2c; failure behavior; mo2c heterostructure;