Cu x S nanosheets with controllable morphology and alignment for memristor devices
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DOI: 10.1088/1361-6528/ac5ca4
Abstract: In electrochemical metallization memristor, the performance of resistive switching (RS) is influenced by the forming and fusing of conductive filaments within the dielectric layer. However, the growth of filaments, mostly, is unpredictable and uncontrollable. For… read more here.
Keywords: controllable morphology; nanosheets controllable; morphology alignment; dielectric layer ... See more keywords