Effects of Growth Temperature on Morphology of GaN Crystals by Na Flux Liquid Phase Epitaxial Method
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-019-07111-y
Abstract: The morphology of GaN crystals grown in a temperature range of 800–860°C by the Na flux liquid phase epitaxial (LPE) method was observed by the optical microscope and the scanning electron microscope (SEM). Significant changes… read more here.
Keywords: morphology gan; temperature; growth temperature; gan crystals ... See more keywords