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Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3007594
Abstract: It is well-known that the dynamic avalanche (DA) phenomenon poses fundamental limits on the power density, turn-off power loss, dV/dt controllability, and long-term reliability of MOS-bipolar devices. Therefore, overcoming this phenomenon is essential to improve…
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Keywords:
bipolar devices;
performance;
density;
mos bipolar ... See more keywords