Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-016-5262-2
Abstract: We report results on the interface trap density (Dit) of 4H- and 6H-SiC metal–oxide–semiconductor (MOS) capacitors with different interface chemistries. In addition to pure dry oxidation, we studied interfaces formed by annealing thermal oxides in… read more here.
Keywords: mos capacitors; nitrogen phosphorus; interface trap; dit ... See more keywords
Effect of annealing temperature on the electrical characteristics of Al/Er2O3/n-Si/Al MOS capacitors
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2021.158718
Abstract: Abstract In this work, Er2O3 films deposited by electron beam (E-beam) evaporation technique were annealed at 450 °C, 550 °C, and 650 °C in N2 atmosphere for 30 min. We then compared the electrical properties, the frequency dependency of… read more here.
Keywords: frequency; mos capacitors; er2o3 mos; annealing temperature ... See more keywords
Flat-band voltage shift of 4H-SiC MOS capacitors induced by interface dipole layer formation at the oxide-semiconductor and oxide-oxide interfaces
Sign Up to like & getrecommendations! Published in 2021 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2021.108115
Abstract: Abstract The positive flat-band voltage (VFB) shifts of 4H-SiC (0001) MOS capacitors with Al2O3/SiO2 dielectric layers were systematically investigated. After nitridation, there was a negative shift of VFB due to the dipole layer at the… read more here.
Keywords: shift; mos capacitors; flat band; dipole layer ... See more keywords
Reliability and Stability Improvement of MOS Capacitors via Nitrogen-Hydrogen Mixed Plasma Pretreatment for SiC Surfaces.
Sign Up to like & getrecommendations! Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.3c00995
Abstract: We investigated the effect of nitrogen-hydrogen (NH) mixed plasma pretreatment of 4H-SiC surfaces on SiC surface properties, SiO2/SiC interface quality, and the reliability and voltage stability of metal-oxide-semiconductor (MOS) capacitors. The NH plasma pretreatment decreased… read more here.
Keywords: pretreatment; surface; reliability; plasma pretreatment ... See more keywords
Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5021411
Abstract: We report on the electrical properties of Al2O3 films grown on 4H-SiC by successive thermal oxidation of thin Al layers at low temperatures (200°C - 300°C). MOS capacitors made using these films contain lower density… read more here.
Keywords: mos capacitors; al2o3 films; characterization amorphous; al2o3 ... See more keywords
Improvement of the electrical performance of Au/Ti/HfO2/Ge0.9Sn0.1 p-MOS capacitors by using interfacial layers
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5121474
Abstract: The impact of different interfacial layers (ILs) on the electrical performances of Au/Ti/HfO2/Ge0.9Sn0.1 metal oxide semiconductor (MOS) capacitors is studied. Parallel angle resolved x-ray photoelectron spectroscopy measurements show that germanium diffuses into the HfO2 layer… read more here.
Keywords: mos capacitors; ge0 9sn0; spectroscopy; hfo2 ... See more keywords
Synergistic effects in MOS capacitors with an Au/HfO2–SiO2/Si structure irradiated with neutron and gamma ray
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/ac3ce8
Abstract: The properties of oxide trapped charges and interface state density in the metal oxide semiconductor (MOS) capacitors with an Au/HfO2–SiO2/Si structure were investigated under irradiation of 14 MeV neutron and 60Co gamma-ray. In the mixed… read more here.
Keywords: mos capacitors; sio2 structure; capacitors hfo2; hfo2 sio2 ... See more keywords
Analysis of admittance measurements of MOS capacitors on CVD grown bilayer MoS 2
Sign Up to like & getrecommendations! Published in 2019 at "2D Materials"
DOI: 10.1088/2053-1583/ab20fb
Abstract: In this study we present results on the AC admittance response of bilayer MoS2 films grown using chemical vapor deposition. A new MOS capacitor design for ultra-thin body 2D materials is proposed. We show that… read more here.
Keywords: bilayer; admittance measurements; analysis admittance; mos capacitors ... See more keywords
Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Access"
DOI: 10.1109/access.2021.3102614
Abstract: Oxide traps existing in 4H-SiC MOS capacitors with fast response times that are active in the strong accumulation and depletion regions were characterized by an integrated-charge method. The method is based on the measurement of… read more here.
Keywords: near interface; integrated charge; method; mos capacitors ... See more keywords
Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate Oxides
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3011661
Abstract: The low channel-carrier mobility in commercial SiC MOSFETs has been attributed to fast electron traps labeled “NI.” These traps exhibit anomalous behavior compared to other interface trap signals. Furthermore, the electrical parameters extracted from a… read more here.
Keywords: interface trap; mos capacitors; interface; conductance ... See more keywords
Charge Trapping Control in MOS Capacitors
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2016.2645159
Abstract: This paper presents an active control of capacitance–voltage (C–V) characteristic for MOS capacitors based on sliding-mode control and sigma–delta modulation. The capacitance of the device at a certain voltage is measured periodically and adequate voltage… read more here.
Keywords: mos capacitors; trapping control; control; control mos ... See more keywords