4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance
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DOI: 10.3390/mi14050950
Abstract: In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics. In addition, a 2D numerical simulator (ATLAS) is used… read more here.
Keywords: trench mos; reverse recovery; channel diode; mos channel ... See more keywords