Investigation on the device geometry-dependent reverse recovery characteristic of AlGaN/GaN lateral field-effect rectifier (L-FER)
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.06.020
Abstract: Abstract In this work, the dependence of the AlGaN/GaN L-FERs’ reverse recovery characteristics on the device geometry (MOS-controlled channel length) is investigated by TCAD Sentaurus. It is found that the reverse recovery time and reverse… read more here.
Keywords: reverse recovery; mos controlled; algan gan; controlled channel ... See more keywords
Experimental Study on Displacement Damage Effects of Anode-Short MOS-Controlled Thyristor
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2020.2971646
Abstract: The metal-oxide-silicon (MOS)-controlled thyristor (MCT) has been characterized by MOS-gating, high-current-rise rate, and high blocking capabilities. The anode-short MCT (AS-MCT) is distinguished from conventional MCT by an anode-short structure, which forms an extracting path for… read more here.
Keywords: mos controlled; controlled thyristor; anode short; displacement damage ... See more keywords