A Tunneling Current Model with a Realistic Barrier for Ultra-Thin High-k Dielectric ZrO2 Material Based MOS Devices
Sign Up to like & getrecommendations! Published in 2017 at "Silicon"
DOI: 10.1007/s12633-017-9648-4
Abstract: In this paper, a theoretical model to estimate the tunneling current density of ultra-thin MOS devices is presented. First an ideal barrier has been assumed for the modeling. Then development in the results is brought… read more here.
Keywords: barrier; ultra thin; mos devices; model ... See more keywords
The effect of oxide layer thickness on the quantification of 1.5 MeV γ–radiation induced interface traps in the Ag/SiO2/Si MOS devices
Sign Up to like & getrecommendations! Published in 2017 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2017.05.026
Abstract: Abstract This work presents the effect of varied thickness of oxide layer and radiation dose on electrical characteristics of Ag/SiO2/Si MOS devices irradiated by 1.5 MeV γ–radiations of varied doses. SiO2 layers of 50, 100, 150… read more here.
Keywords: layer; mos devices; oxide layer; interface traps ... See more keywords
Atomic layer deposition of high-κ layers on polycrystalline diamond for MOS devices: a review
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Materials Chemistry C"
DOI: 10.1039/d0tc02063j
Abstract: Changes in the expected performance of electronic devices have heavily influenced investigation into Si-substitute materials having the ability to meet these demands. Two examples are especially pertinent to the performance of metal oxide semiconductor (MOS)… read more here.
Keywords: mos devices; polycrystalline diamond; diamond mos; atomic layer ... See more keywords
Impact of nitridation on the reliability of 4H-SiC(112̄0) MOS devices
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DOI: 10.35848/1882-0786/ac5ace
Abstract: The leakage current and flat-band voltage (V FB) instability of NO-nitrided SiC(11 2¯ 0) (a-face) MOS devices were systematically investigated. Although NO nitridation is effective in improving the interface properties, we found that it reduces… read more here.
Keywords: impact nitridation; sic 112; nitridation reliability; 112 mos ... See more keywords