Enhanced performances of AlGaN/GaN HEMTs with dielectric engineering of HfZrOx
Sign Up to like & getrecommendations! Published in 2020 at "Nano Energy"
DOI: 10.1016/j.nanoen.2019.104361
Abstract: Abstract III-nitrides based high electron-mobility transistors (HEMTs) are well-known excellent candidates for high-power, radio-frequency (rf) and high-temperature applications. However, HEMTs have to face the essential issues of high gate leakage current and drain current collapse… read more here.
Keywords: dielectric engineering; algan gan; gate; mos hemt ... See more keywords
Influence of Graded AlGaN sub-channel over the DC and Breakdown characteristics of a T-gated AlGaN/GaN/AlInN MOS-HEMT
Sign Up to like & getrecommendations! Published in 2021 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2021.106954
Abstract: Abstract The impact of graded Al0.05Ga0.95N sub-channel over the DC characteristics of AlGaN/GaN/AlInN Metal Oxide Semiconductor-High Electron Mobility Transistor (MOS-HEMT) has been investigated here. By placing a field plate over the gate region and forming… read more here.
Keywords: algan gan; hemt; mos hemt; gan alinn ... See more keywords
Remarkable Reduction in IG with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15249067
Abstract: We demonstrated the performance of an Al2O3/SiO2 stack layer AlGaN/GaN metal–oxide semiconductor (MOS) high-electron-mobility transistor (HEMT) combined with a dual surface treatment that used tetramethylammonium hydroxide (TMAH) and hydrochloric acid (HCl) with post-gate annealing (PGA)… read more here.
Keywords: layer; conduction; stack; gate ... See more keywords