Electrothermal DC characterization of GaN on Si MOS-HEMTs
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.08.002
Abstract: Abstract DC characteristics of AlGaN/GaN on Si single finger MOS-HEMTs, for different gate geometries, have been measured and numerically simulated with substrate temperatures up to 150 °C. Defect density, depending on gate width, and thermal resistance,… read more here.
Keywords: methodology; mos hemts; temperature; electrothermal characterization ... See more keywords
Thermal and Electrical Stability Assessment of AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2 Gate Dielectric
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2842205
Abstract: AlGaN/GaN high-electron mobility transistors (HEMTs) and metal–oxide–semiconductor (MOS)-HEMTs using HfO2 as a gate dielectric have been analyzed at room temperature, after short thermal annealing (STA) and thermal cycle tests, during off-state electrical step stress, high-temperature… read more here.
Keywords: mos hemts; algan gan; high electron; hemts ... See more keywords