Normally-off AlGaN/GaN-on-Si MOS-HFET with a monolithically integrated single-stage inverter as a gate driver
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DOI: 10.1049/el.2016.2813
Abstract: A normally-off AlGaN/GaN-on-Si metal–oxide–semiconductor-heterojunction field-effect transistor (MOS-HFET) with an integrated single-stage inverter is developed. The integrated single-stage GaN inverter consisted of an AlGaN/GaN driver MOS-HFET and a resistive load. With the monolithically integrated gate driver,… read more here.
Keywords: single stage; mos hfet; driver; algan gan ... See more keywords