Simulation study on the influence of metal contact and MOS interface trap states on the electrical characteristics of SiC IGBT
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DOI: 10.1063/5.0144550
Abstract: A 13 kV class n-channel 4H–SiC trench gate insulated gate bipolar transistor (IGBT) structure is designed based on Silvaco TCAD device simulator tool. The influence of metal/SiC and SiC MOS interface trap states on the static… read more here.
Keywords: mos interface; interface trap; trap states; interface ... See more keywords