Potential changes and chemical bonding features for Si-MOS structure as evaluated from HAXPES analysis
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DOI: 10.1016/j.mee.2017.05.002
Abstract: An Au/SiO2/Si MOS structure was fabricated by the thermal oxidation of H-terminated Si(100) surface and the electrode formation, and hard X-ray photo-emission spectroscopy (HAXPES) measurements of MOS structure under the different applied bias conditions were… read more here.
Keywords: features mos; bonding features; chemical bonding; mos structure ... See more keywords