Model of the Effect of the Gate Bias on MOS Structures under Ionizing Radiation
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DOI: 10.1134/s1063782620020025
Abstract: Abstract A new quantitative model of the effect of the gate bias on the threshold voltage of metal-oxide-semiconductor (MOS) structures under ionizing irradiation is developed based on the consideration of hole trapping from the entire… read more here.
Keywords: gate bias; model effect; gate; effect gate ... See more keywords