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Published in 2024 at "Advanced Science"
DOI: 10.1002/advs.202307196
Abstract: The pursuit of sub‐1‐nm field‐effect transistor (FET) channels within 3D semiconducting crystals faces challenges due to diminished gate electrostatics and increased charge carrier scattering. 2D semiconductors, exemplified by transition metal dichalcogenides, provide a promising alternative.…
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Keywords:
van der;
mos2 fets;
frequency noise;
der waals ... See more keywords
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Published in 2025 at "Small"
DOI: 10.1002/smll.202506345
Abstract: The restorative effects of sulfur (S)-passivation through low-temperature (160 °C) post-S annealing on the performance and stability of monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) are investigated. S-passivation suppresses S vacancies in the monolayer MoS2 channel,…
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Keywords:
restorative effects;
mos2 fets;
post;
monolayer mos2 ... See more keywords
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Published in 2025 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.5c07597
Abstract: In this study, we demonstrate that a room-temperature reactively sputtered aluminum oxynitride (AlOxNy) overlayer enables both effective doping and pronounced threshold voltage hysteresis in multilayer MoS2 FETs, while preserving field-effect mobility. Compared to conventional AlOx,…
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Keywords:
mos2 fets;
phonon assisted;
voltage;
threshold voltage ... See more keywords
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Published in 2025 at "Nanoscale horizons"
DOI: 10.1039/d5nh00089k
Abstract: Transition metal dichalcogenide (TMD) materials, such as molybdenum disulfide (MoS2), have emerged as promising platforms for exploring electrically tunable light-matter interactions, which are critical for designing high-performance photodetector systems. In this study, we investigate the…
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Keywords:
effect;
mos2 fets;
photoluminescence;
quantum tunneling ... See more keywords