Pulsed Gate Switching of MoS2 Field‐Effect Transistor Based on Flexible Polyimide Substrate for Ultrasonic Detectors
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202007389
Abstract: Molybdenum disulfide (MoS2) semiconductors have closely been studied for potential applications in detectors, optoelectronics, and flexible electronics due to its high electrical and robust mechanical performance. Herein, the first experimental study of the high‐speed ultrasound… read more here.
Keywords: gate; effect transistor; high speed; field effect ... See more keywords
Zero‐Bias Power‐Detector Circuits based on MoS2 Field‐Effect Transistors on Wafer‐Scale Flexible Substrates
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202108469
Abstract: The design, fabrication, and characterization of wafer‐scale, zero‐bias power detectors based on 2D MoS2 field‐effect transistors (FETs) are demonstrated. The MoS2 FETs are fabricated using a wafer‐scale process on 8 μm‐thick polyimide film, which, in… read more here.
Keywords: mos2 field; power; based mos2; wafer scale ... See more keywords
Gate Stack Engineering in MoS2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202000395
Abstract: 2D transition metal dichalcogenides (TMDs) are promising semiconductive films for applications in future devices due to their prosperous and tunable band structures. However, most TMD‐based top gate transistors suffer from a significant doping effect in… read more here.
Keywords: gate; channel doping; field effect; effect ... See more keywords
Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS2 Field Effect Transistors.
Sign Up to like & getrecommendations! Published in 2021 at "Nano letters"
DOI: 10.1021/acs.nanolett.1c00180
Abstract: Molybdenum disulfide (MoS2) has been regarded as one of the most important n-type two-dimensional (2D) transition metal dichalcogenide semiconductors for nanoscale electron devices. Relatively high contact resistance (RC) remains as an issue in the 2D-devices… read more here.
Keywords: contact resistance; ultrathin lif; field effect; two dimensional ... See more keywords
Dual-gate manipulation of a HfZrOx-based MoS2 field-effect transistor towards enhanced neural network applications.
Sign Up to like & getrecommendations! Published in 2022 at "Nanoscale"
DOI: 10.1039/d2nr05720d
Abstract: Artificial neural networks (ANNs) have strong learning and computing capabilities, and alleviate the problem of high power consumption of traditional von Neumann architectures, providing a solid basis for advanced image recognition, information processing, and low-power… read more here.
Keywords: field effect; dual gate; mos2 field; gate ... See more keywords
Layer thickness influenced irradiation effects of proton beam on MoS2 field effect transistors
Sign Up to like & getrecommendations! Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/abd129
Abstract: We investigated the influence of the flake thickness for molybdenum disulfide (MoS2) field effect transistors on the effect of a 150 keV high-energy proton beam applied on these devices. The electrical characteristics of the devices… read more here.
Keywords: irradiation; field effect; effect; effect transistors ... See more keywords
Analysis of Schottky barrier heights and reduced Fermi-level pinning in monolayer CVD-grown MoS2 field-effect-transistors
Sign Up to like & getrecommendations! Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac55d2
Abstract: Chemical vapor deposition (CVD)-grown monolayer (ML) molybdenum disulfide (MoS2) is a promising material for next-generation integrated electronic systems due to its capability of high-throughput synthesis and compatibility with wafer-scale fabrication. Several studies have described the… read more here.
Keywords: grown mos2; effect; schottky barrier; mos2 field ... See more keywords
Effect of ultrathin Fe dusting layer on electrical transport properties of few-layer MoS2 field-effect transistors
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Vacuum Science and Technology"
DOI: 10.1116/1.4986195
Abstract: Transition-metal-doped MoS2 has been predicted to be a potential candidate for a two dimensional dilute magnetic semiconductor, while the effect of transition metal dopants on the electrical properties of MoS2-based devices has received relatively less… read more here.
Keywords: electrical transport; field effect; effect; effect transistors ... See more keywords