Substitutional p‐Type Doping in NbS2–MoS2 Lateral Heterostructures Grown by MOCVD
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Materials"
DOI: 10.1002/adma.202209371
Abstract: Monolayer MoS2 has attracted significant attention owing to its excellent performance as an n‐type semiconductor from the transition metal dichalcogenide (TMDC) family. It is however strongly desired to develop controllable synthesis methods for 2D p‐type… read more here.
Keywords: mos2 lateral; nbs2 mos2; substitutional type; type doping ... See more keywords
Synthesis of a Selectively Nb-Doped WS2-MoS2 Lateral Heterostructure for a High-Detectivity PN Photodiode.
Sign Up to like & getrecommendations! Published in 2022 at "ACS nano"
DOI: 10.1021/acsnano.2c02242
Abstract: In this study, selective Nb doping (P-type) at the WS2 layer in a WS2-MoS2 lateral heterostructure via a chemical vapor deposition (CVD) method using a solution-phase precursor containing W, Mo, and Nb atoms is proposed.… read more here.
Keywords: mos2 lateral; ws2 mos2; doped ws2; heterostructure ... See more keywords