Hysteresis-free MoS2 metal semiconductor field-effect transistors with van der Waals Schottky junction
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DOI: 10.1088/1361-6528/abd2e8
Abstract: Hysteresis-free and steep subthreshold swing (SS) are essential for low-power reliable electronics. Herein, MoS2 metal semiconductor field-effect transistors are fabricated with GeSe/MoS2 van der Waals Schottky junction as a local gate, in which the rectification… read more here.
Keywords: semiconductor field; mos2 metal; hysteresis free; effect transistors ... See more keywords