Impacts of HfZrO thickness and anneal temperature on performance of MoS2 negative-capacitance field-effect transistors
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DOI: 10.1088/1361-6528/ac197a
Abstract: The MoS2 negative-capacitance field-effect transistor (NCFET) with the ultra-thin (3 nm) HfZrO (HZO) as NC layer and 2 nm Al2O3 as dielectric layer is successfully fabricated by optimizing the annealing temperature and the HZO thickness.… read more here.
Keywords: temperature; negative capacitance; effect; mos2 negative ... See more keywords