Dual-gate MoS2 phototransistor with atomic-layer-deposited HfO2 as top-gate dielectric for ultrahigh photoresponsivity
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DOI: 10.1088/1361-6528/abe2cc
Abstract: An asymmetric dual-gate (DG) MoS2 field-effect transistor (FET) with ultrahigh electrical performance and optical responsivity using atomic-layer-deposited HfO2 as a top-gate (TG) dielectric was fabricated and investigated. The effective DG modulation of the MoS2 FET… read more here.
Keywords: mos2 phototransistor; mos2; ultrahigh photoresponsivity; gate ... See more keywords