Low sub-threshold swing realization with contacts of graphene/h-BN/MoS2 heterostructures in MoS2 transistors
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4997226
Abstract: MoS2 and other atomically thin-layered semiconductors have attracted intensive interest for their unique characteristics and have become promising candidates for short-channel transistor devices. In this work, we demonstrate an MoS2 transistor with a graphene/hBN/MoS2 heterostructure… read more here.
Keywords: sub threshold; mos2 transistor; threshold swing; low sub ... See more keywords
High-performance ambipolar MoS2 transistor enabled by indium edge contacts
Sign Up to like & getrecommendations! Published in 2021 at "Nanotechnology"
DOI: 10.1088/1361-6528/abe438
Abstract: The integration of electrical contact into 2D heterostructure is an essential approach to high-quality electronic nano-devices, especially field-effect transistors. However, high contact resistance with transition metal dichalcogenides such as molybdenum disulphide (MoS2)-based devices has been… read more here.
Keywords: mos2 transistor; performance ambipolar; ambipolar mos2; mos2 ... See more keywords