Articles with "mos2 transistors" as a keyword



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Ultra‐Steep‐Slope High‐Gain MoS2 Transistors with Atomic Threshold‐Switching Gate

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Published in 2022 at "Advanced Science"

DOI: 10.1002/advs.202104439

Abstract: The fundamental Boltzmann limitation dictates the ultimate limit of subthreshold swing (SS) to be 60 mV dec−1, which prevents the continued scaling of supply voltage. With atomically thin body, 2D semiconductors provide new possibilities for… read more here.

Keywords: high gain; steep slope; mos2; mos2 transistors ... See more keywords
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Crypto primitive of MOCVD MoS2 transistors for highly secured physical unclonable functions

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Published in 2020 at "Nano Research"

DOI: 10.1007/s12274-020-3033-0

Abstract: Physically unclonable crypto primitives have potential applications for anti-counterfeiting, identification, and authentication, which are clone proof and resistant to variously physical attack. Conventional physical unclonable function (PUF) based on Si complementary metal-oxide-semiconductor (CMOS) technologies greatly… read more here.

Keywords: highly secured; crypto primitive; physical unclonable; primitive mocvd ... See more keywords
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Emulating synaptic response in n- and p-channel MoS2 transistors by utilizing charge trapping dynamics

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Published in 2020 at "Scientific Reports"

DOI: 10.1038/s41598-020-68793-7

Abstract: Brain-inspired, neuromorphic computing aims to address the growing computational complexity and power consumption in modern von-Neumann architectures. Progress in this area has been hindered due to the lack of hardware elements that can mimic neuronal/synaptic… read more here.

Keywords: channel mos2; response; emulating synaptic; response channel ... See more keywords
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Long-term stability of multilayer MoS2 transistors with mica gate dielectric.

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Published in 2020 at "Nanotechnology"

DOI: 10.1088/1361-6528/ab6ab2

Abstract: To avoid surface damage of MoS2 channel, mica flake with high permittivity and atomically flat surface was dry transferred onto a multilayer MoS2 flake to prepare top-gated transistors. For the first time, the interface properties… read more here.

Keywords: long term; mos2; mos2 transistors; stability ... See more keywords