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Published in 2022 at "Advanced Science"
DOI: 10.1002/advs.202104439
Abstract: The fundamental Boltzmann limitation dictates the ultimate limit of subthreshold swing (SS) to be 60 mV dec−1, which prevents the continued scaling of supply voltage. With atomically thin body, 2D semiconductors provide new possibilities for…
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Keywords:
high gain;
steep slope;
mos2;
mos2 transistors ... See more keywords
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Published in 2020 at "Nano Research"
DOI: 10.1007/s12274-020-3033-0
Abstract: Physically unclonable crypto primitives have potential applications for anti-counterfeiting, identification, and authentication, which are clone proof and resistant to variously physical attack. Conventional physical unclonable function (PUF) based on Si complementary metal-oxide-semiconductor (CMOS) technologies greatly…
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Keywords:
highly secured;
crypto primitive;
physical unclonable;
primitive mocvd ... See more keywords
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Published in 2020 at "Scientific Reports"
DOI: 10.1038/s41598-020-68793-7
Abstract: Brain-inspired, neuromorphic computing aims to address the growing computational complexity and power consumption in modern von-Neumann architectures. Progress in this area has been hindered due to the lack of hardware elements that can mimic neuronal/synaptic…
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Keywords:
channel mos2;
response;
emulating synaptic;
response channel ... See more keywords
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Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab6ab2
Abstract: To avoid surface damage of MoS2 channel, mica flake with high permittivity and atomically flat surface was dry transferred onto a multilayer MoS2 flake to prepare top-gated transistors. For the first time, the interface properties…
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Keywords:
long term;
mos2;
mos2 transistors;
stability ... See more keywords