Ultra‐Steep‐Slope High‐Gain MoS2 Transistors with Atomic Threshold‐Switching Gate
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Science"
DOI: 10.1002/advs.202104439
Abstract: The fundamental Boltzmann limitation dictates the ultimate limit of subthreshold swing (SS) to be 60 mV dec−1, which prevents the continued scaling of supply voltage. With atomically thin body, 2D semiconductors provide new possibilities for… read more here.
Keywords: high gain; steep slope; mos2; mos2 transistors ... See more keywords
Crypto primitive of MOCVD MoS2 transistors for highly secured physical unclonable functions
Sign Up to like & getrecommendations! Published in 2020 at "Nano Research"
DOI: 10.1007/s12274-020-3033-0
Abstract: Physically unclonable crypto primitives have potential applications for anti-counterfeiting, identification, and authentication, which are clone proof and resistant to variously physical attack. Conventional physical unclonable function (PUF) based on Si complementary metal-oxide-semiconductor (CMOS) technologies greatly… read more here.
Keywords: highly secured; crypto primitive; physical unclonable; primitive mocvd ... See more keywords
Emulating synaptic response in n- and p-channel MoS2 transistors by utilizing charge trapping dynamics
Sign Up to like & getrecommendations! Published in 2020 at "Scientific Reports"
DOI: 10.1038/s41598-020-68793-7
Abstract: Brain-inspired, neuromorphic computing aims to address the growing computational complexity and power consumption in modern von-Neumann architectures. Progress in this area has been hindered due to the lack of hardware elements that can mimic neuronal/synaptic… read more here.
Keywords: channel mos2; response; emulating synaptic; response channel ... See more keywords
Long-term stability of multilayer MoS2 transistors with mica gate dielectric.
Sign Up to like & getrecommendations! Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab6ab2
Abstract: To avoid surface damage of MoS2 channel, mica flake with high permittivity and atomically flat surface was dry transferred onto a multilayer MoS2 flake to prepare top-gated transistors. For the first time, the interface properties… read more here.
Keywords: long term; mos2; mos2 transistors; stability ... See more keywords
Strain Induced by Evaporated-Metal Contacts on Monolayer MoS2 Transistors
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2024.3410095
Abstract: Electron-beam evaporation is commonly used to form metal contacts on two-dimensional (2D) materials. Many evaporated metals contain high levels of stress, but the effect of this stress on 2D device performance has yet to be… read more here.
Keywords: mos2 transistors; device; contacts monolayer; monolayer mos2 ... See more keywords
High-frequency characteristics of ultra-short gate MoS2 transistors
Sign Up to like & getrecommendations! Published in 2025 at "Applied Physics Express"
DOI: 10.35848/1882-0786/adbcf5
Abstract: Short channel transistors are gaining attention for high-frequency applications. MoS2 transistors, with their atomically thin structure, exhibit excellent on/off switching and low intrinsic capacitance. This study employs the nonequilibrium Green’s function formalism to analyze their… read more here.
Keywords: mos2 transistors; frequency characteristics; gate; characteristics ultra ... See more keywords