Hafnium oxide based cylindrical junctionless double surrounding gate (CJLDSG) MOSFET for high speed, high frequency digital and analog applications
Sign Up to like & getrecommendations! Published in 2019 at "Microsystem Technologies"
DOI: 10.1007/s00542-017-3436-3
Abstract: In this paper Hafnium Oxide (HfO2) based cylindrical Junctionless Double Surrounding Gate (CJLDSG) MOSFET has been analyzed for various metrics of device performance. HfO2 based CJLDSG MOSFET has been compared with HfO2 based Cylindrical Junctionless… read more here.
Keywords: hfo2 based; cjldsg mosfet; frequency; mosfet ... See more keywords
A 10 nm MOS and its applications
Sign Up to like & getrecommendations! Published in 2020 at "Microsystem Technologies"
DOI: 10.1007/s00542-020-04781-1
Abstract: A 10 nm Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and Complementary Metal Oxide Semiconductor (CMOS) are presented in this paper. A channel length of 24.6 nm and an optimized threshold voltage of 0.40961 v at drain… read more here.
Keywords: voltage; drain; semiconductor; mosfet ... See more keywords
A novel low power MOSFET-C band pass filter for low frequency applications with subthreshold models based on polynomial regression
Sign Up to like & getrecommendations! Published in 2018 at "Analog Integrated Circuits and Signal Processing"
DOI: 10.1007/s10470-018-1227-0
Abstract: A novel current mode MOSFET-C filter is presented for a wide range of low frequency applications ranging from biomedical signal sensing up to speech processing region. Presented filter consumes only 2.3 µW with symmetrical supply voltages… read more here.
Keywords: frequency applications; mosfet; based polynomial; filter ... See more keywords
Analysis and modeling of unipolar junction transistor with excellent performance: a novel DG MOSFET with $${N}^{+}{-}{P}^{-}$$N+-P- junction
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-018-1152-6
Abstract: We propose herein a new dual-gate metal–oxide–semiconductor field-effect transistor (MOSFET) with just a unipolar junction (UJ-DG MOSFET) on the source side. The UJ-DG MOSFET structure is constructed from an $${N}^{+}$$N+ region on the source side… read more here.
Keywords: unipolar junction; field; mosfet; gate ... See more keywords
Ultralow-power dielectric-modulated nanogap-embedded sub-20-nm TGRC-MOSFET for biosensing applications
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-018-1237-2
Abstract: This work examines a transparent gate recessed channel (TGRC) metal–oxide–semiconductor field-effect transistor (MOSFET) for biosensing, including a nanogap cavity for detection of biomolecules and a transparent gate to enhance the overall current efficiency of the… read more here.
Keywords: mosfet biosensing; mosfet; power; sensitivity ... See more keywords
Analytical Study of Effect of Channel Doping on Threshold Voltage of Metal Gate High-k SiGe MOSFET
Sign Up to like & getrecommendations! Published in 2017 at "Silicon"
DOI: 10.1007/s12633-017-9631-0
Abstract: The paper reports the analytical model for the analysis of the effects of channel doping on the threshold voltage. A silicon germanium p-MOSFET with high-k dielectric material along with a metal gate is used for… read more here.
Keywords: mosfet; threshold voltage; channel doping; doping threshold ... See more keywords
Dual-Metal Double-Gate with Low-k/High-k Oxide Stack Junctionless MOSFET for a Wide Range of Protein Detection: a Fully Electrostatic Based Numerical Approach
Sign Up to like & getrecommendations! Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00430-4
Abstract: We investigate the performance of a dielectric modulated dual-metal double-gate with low-k/high-k oxide stack junctionless MOSFET (DM-DG-LK/HK-S JL-MOSFET) based sensor device for successful detection of different protein molecules in dry environment condition, in terms of… read more here.
Keywords: protein; detection; mosfet; gate ... See more keywords
Shallow Extension Engineered Dual Material Surrounding Gate (SEE-DM-SG) MOSFET for improved gate leakages, analysis of circuit and noise performance
Sign Up to like & getrecommendations! Published in 2019 at "AEU - International Journal of Electronics and Communications"
DOI: 10.1016/j.aeue.2019.152924
Abstract: Abstract The leakages in off state, particularly Gate Induced Drain Leakage (GIDL) has been addressed and reduced by proposing a Shallow Extension Engineered Dual Material Surrounding Gate (SEE-DM-SG) MOSFET. The shallow extensions create an insulating… read more here.
Keywords: surrounding gate; mosfet; noise; see mosfet ... See more keywords
A nano-FET structure comprised of inherent paralleled TFET and MOSFET with improved performance
Sign Up to like & getrecommendations! Published in 2020 at "Ain Shams Engineering Journal"
DOI: 10.1016/j.asej.2020.03.013
Abstract: Abstract In this paper we unveil of a new structure in which a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is paralleled with a Tunneling Field Effect Transistor (TFET) to increase on-state current. In order… read more here.
Keywords: tfet; performance; gain; structure ... See more keywords
Inversion channel MOSFET on heteroepitaxially grown free-standing diamond
Sign Up to like & getrecommendations! Published in 2020 at "Carbon"
DOI: 10.1016/j.carbon.2020.11.072
Abstract: ABSTRACT We successfully fabricated the inversion-type p-channel metal–oxide–semiconductor field-effect transistor (MOSFET) on heteroepitaxially grown free-standing diamond using silicon-based substrates. The drain current–drain voltage (Ids–Vds) and drain current–gate voltage (Ids–Vgs) characteristics were examined. The maximum drain… read more here.
Keywords: inversion; mosfet; channel; diamond ... See more keywords
Circuit-type modelling of SiC power Mosfet in short-circuit operation including selective fail-to-open and fail-to-short modes competition
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.113501
Abstract: Abstract SiC Mosfet has very unique properties in extreme operation such as a well-known fail-to-short failure mode but in competition with a lesser known fail-to-open failure mode. These two modes are generally studied and modelled… read more here.
Keywords: fail short; fail; mosfet; fail open ... See more keywords