Inversion channel MOSFET on heteroepitaxially grown free-standing diamond
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DOI: 10.1016/j.carbon.2020.11.072
Abstract: ABSTRACT We successfully fabricated the inversion-type p-channel metal–oxide–semiconductor field-effect transistor (MOSFET) on heteroepitaxially grown free-standing diamond using silicon-based substrates. The drain current–drain voltage (Ids–Vds) and drain current–gate voltage (Ids–Vgs) characteristics were examined. The maximum drain… read more here.
Keywords: inversion; mosfet; channel; diamond ... See more keywords