Comparison of 1700-V SiC-MOSFET and Si-IGBT Modules Under Identical Test Setup Conditions
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DOI: 10.1109/tia.2019.2934713
Abstract: In this article, a detailed hard switching behavior comparison between a 1700-V silicon carbide metal-oxide-semiconductor field-effect-transistor and a 1700-V silicon insulated-gate bipolar-transistor module was performed in an identical low inductance commutation circuit for comparable driving… read more here.
Keywords: mosfet igbt; comparison 1700; modules identical; 1700 sic ... See more keywords