A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance
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DOI: 10.3390/mi14051061
Abstract: In this article, a 1.2-kV-rated double-trench 4H-SiC MOSFET with an integrated low-barrier diode (DT-LBDMOS) is proposed which eliminates the bipolar degradation of the body diode and reduces switching loss while increasing avalanche stability. A numerical… read more here.
Keywords: sic mosfet; mosfet; loss sic; mosfet improved ... See more keywords