Effective integration of a MOSFET phototransistor to a GaN LED for UV sensing.
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DOI: 10.1364/ol.463236
Abstract: In this Letter, we report an effective monolithic integration of a metal oxide semiconductor field effect (MOSFET) phototransistor (PT) and a light-emitting diode (LED) on a GaN-on-Si LED epitaxial (epi) wafer. Avoiding additional growth or… read more here.
Keywords: gan led; mosfet phototransistor; effective integration;