Investigation on 4H SiC MOSFET with three-section edge termination
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DOI: 10.1016/j.spmi.2018.10.018
Abstract: Abstract SiC MOSFET with three-section edge termination is investigated in this paper. The edge termination for SiC MOSFET is divided into three sections with different field limited rings and the space between rings, which benefits… read more here.
Keywords: sic mosfet; mosfet three; edge termination;