Hydrogen-terminated polycrystalline diamond MOSFETs with Al2O3 passivation layers grown by atomic layer deposition at different temperatures
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5037925
Abstract: Metal oxide semiconductor field effect transistors (MOSFETs) with Al2O3 passivation layer grown by atomic layer deposition (ALD) at 200 oC and 300 oC were fabricated on hydrogen-terminated polycrystalline diamond by using gold mask technology. The… read more here.
Keywords: grown atomic; layer; atomic layer; mosfets al2o3 ... See more keywords