Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures
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DOI: 10.1109/tpel.2023.3265864
Abstract: To clarify the current research situation and offer a better understanding of the reliability for silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfets), a comparison among the reliability mechanisms between planar-gate (PG) and trench-gate (TG)… read more here.
Keywords: power; reliability; mosfets comparison; sic power ... See more keywords