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Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2938262
Abstract: An overview over issues and findings in SiC power MOSFET reliability is given. The focus of this article is on threshold instabilities and the differences to Si power MOSFETs. Measurement techniques for the characterization of…
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Keywords:
threshold voltage;
voltage;
sic mosfets;
mosfets high ... See more keywords