Updated structure of vertical double-diffused MOSFETs for irradiation hardening against single events
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DOI: 10.1007/s10825-018-1224-7
Abstract: The gate oxide layer and parasitic bipolar junction transistor are inherent elements of vertical double-diffused power metal–oxide–semiconductor field-effect transistors (MOSFETs). Single-event gate rupture (SEGR) and single-event burnout (SEB) may be triggered by penetration of energetic… read more here.
Keywords: layer; power; single event; vertical double ... See more keywords