P-Channel MOSFETs on Phosphorous-Doped n-Type Diamond
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DOI: 10.1109/led.2024.3485683
Abstract: P-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been demonstrated on phosphorus-doped n-type diamond epilayers. The p-channel nature arises from the surface conductivity resulting from hydrogenated termination on the n-type diamond surface. The MOSFET exhibits normally-on properties… read more here.
Keywords: mosfets phosphorous; doped type; type diamond; diamond ... See more keywords