Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire Channels
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DOI: 10.1109/ted.2017.2749324
Abstract: The self-heating effects (SHEs) in gate-all-around (GAA) MOSFETs with vertically stacked silicon nanowire (SiNW) channels are investigated. Direct observations using thermal images, electrical proof measurements, and supportive numerical simulations are carried out to verify the… read more here.
Keywords: heating effects; silicon nanowire; vertically stacked; mosfets vertically ... See more keywords