Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave Applications
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DOI: 10.1134/s1063782618160029
Abstract: In this work, the DC and RF performance of a 20 nm gate length novel metal oxide semiconductor high electron mobility transistor (MOSHEMT) on Silicon substrate is studied using Sentaurus TCAD tool. The proposed MOSHEMT… read more here.
Keywords: silicon substrate; wave applications; performance; moshemt silicon ... See more keywords